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Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function

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Abstract

The shape of the spontaneous-emission spectra of quantum-well InGaAs structures is analyzed in a wide current interval at temperatures 4.2–286 K. Using a modified homogeneous lineshape function, an interpretation of the band shape for transitions between the lowest subbands is given and the nature of its non-Lorentzian contour is discussed. The properties of a family of functions exhibiting a continuous transition from a Lorentzian to a Gaussian lineshape are discussed. They could be suitable for modeling spectra in the case of non-Markovian collisional relaxation.

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Fiz. Tekh. Poluprovodn. 32, 478–483 (April 1998)

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Eliseev, P.G., Akimova, I.V. Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function. Semiconductors 32, 428–433 (1998). https://doi.org/10.1134/1.1187409

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  • DOI: https://doi.org/10.1134/1.1187409

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