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Optical absorption and photosensitivity of CuInxGa1-x Se2 thin film structures

  • Electronic and Optical Properties of Semiconductors
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Abstract

Thin polycrystalline films of CuInxGa1−x Se2 (0⩽x⩽1) were fabricated by pulsed laser evaporation. Results of measurements of the optical properties, photocurrent polarization indicatrices, and spectral dependence of the photoconversion quantum yield of In-p-CuInxGa1−x Se2 structures are discussed. A window effect in the photosensitivity has been observed, and it is concluded that it is possible to use CuInxGa1−x Se2 thin films as photoconverters of solar radiation.

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Authors and Affiliations

  1. State Technical University, 195251, St. Petersburg, Russia

    Yu. V. Rud’

  2. A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. Yu. Rud’

  3. State University of Informatics and Radio Electronics, 220027, Minsk, Belarus

    I. V. Bodnar’ & V. F. Gremenok

Authors
  1. Yu. V. Rud’
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  2. V. Yu. Rud’
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  3. I. V. Bodnar’
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  4. V. F. Gremenok
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Fiz. Tekh. Poluprovodn. 32, 432–435 (April 1998)

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Rud’, Y.V., Rud’, V.Y., Bodnar’, I.V. et al. Optical absorption and photosensitivity of CuInxGa1-x Se2 thin film structures. Semiconductors 32, 385–388 (1998). https://doi.org/10.1134/1.1187416

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  • DOI: https://doi.org/10.1134/1.1187416

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