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On trapping of minority current carriers in n-type CdxHg1-x Te at low temperatures

  • Electronic and Optical Properties of Semiconductors
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Abstract

The photoconductivity and photoelectromagnetic effect was measured under conditions of uniaxial elastic deformation in n-type CdxHg1-x Te crystals. The increase in the current-carrier lifetime in the low-temperature range (T<40–50 K) is shown to be due to trapping of minority current carriers (holes) in shallow acceptor-type attachment levels rather than interband Auger recombination.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252650, Kiev, Ukraine

    S. G. Gasan-zade & G. A. Shepel’skii

Authors
  1. S. G. Gasan-zade
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  2. G. A. Shepel’skii
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Fiz. Tekh. Poluprovodn. 32, 436–438 (April 1998)

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Gasan-zade, S.G., Shepel’skii, G.A. On trapping of minority current carriers in n-type CdxHg1-x Te at low temperatures. Semiconductors 32, 389–391 (1998). https://doi.org/10.1134/1.1187401

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  • DOI: https://doi.org/10.1134/1.1187401

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