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Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra

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An Erratum to this article was published on 01 November 1998

Abstract

The spontaneous emission spectra of strained InGaAs quantum wells in the spectral range 1.2–1.5 eV were studied experimentally at 4.2–286 K with pump currents up to ∼9.2 kA· cm−2. An interpretation of the observed bands is given. The transition 1e–1hh (TE polarization) dominates the spectrum. The position of the peak for this transition is virtually current-independent. No indications of a “red” shift, expected at a high carrier density, were observed. The weak forbidden transitions (1e–2hh) were identified. The longwavelength edge of the band drops off exponentially, by analogy with the well-known Urbach rule for the absorption edge.

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Authors and Affiliations

  1. Center of High-Technology Materials University of New Mexico, Albuquerque, USA

    P. G. Eliseev

  2. P. N. Lebedev Physical Institute, 117924, Moscow, Russian

    I. V. Akimova

Authors
  1. P. G. Eliseev
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  2. I. V. Akimova
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Additional information

Fiz. Tekh. Poluprovodn. 32, 472–477 (April 1998)

An erratum to this article is available at http://dx.doi.org/10.1134/1.1187603.

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Eliseev, P.G., Akimova, I.V. Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra. Semiconductors 32, 423–427 (1998). https://doi.org/10.1134/1.1187554

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  • DOI: https://doi.org/10.1134/1.1187554

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