Skip to main content
Log in

Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III–V compounds (AlSb, GaSb, InSb, GaAs, InAs)

  • Atomic Structure and Non-Electronic Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The temperature dependence of the specific volume of melts of III–V compounds has been studied thermometrically and with penetrating γ radiation. The thermal expansion of these melts has been estimated at various temperatures. Based on the similarity of the structure of the melts and the elastic continuum, the characteristic Debye temperatures and rms dynamic displacements of the atoms in the close-range-order structure of these melts have been calculated from the estimated thermal expansion. A considerable change in the indicated characteristics is observed at the transition from the solid state to the liquid state, indicating significant changes in the vibrational spectrum of III–V compounds upon melting. The thermal expansion of the melts is observed to increase upon heating, indicating a further loss of strength of the interatomic bonds in the melts with growth of temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. A. R. Regel’, in Structure and Physical Properties of Materials in the Liquid State [in Russian] (Kiev State Univ., Kiev, 1954), p. 117.

    Google Scholar 

  2. A. R. Regel’ and V. M. Glazov, Periodic Law and Physical Properties of Electronic Alloys [in Russian] (Nauka, Moscow, 1978).

    Google Scholar 

  3. A. R. Regel’ and N. P. Mokrovskii, Zh. Tekh. Fiz. 22, 1281 (1952).

    Google Scholar 

  4. V. M. Glazov, S. N. Chizhevskaya, and N. N. Glagoleva, Liquid Semiconductors [in Russian] (Nauka, Moscow, 1967).

    Google Scholar 

  5. V. M. Glazov, S. N. Chizhevskaya, and S. B. Evgen’ev, Zh. Fiz. Khim. 43, 378 (1969).

    Google Scholar 

  6. V. M. Glazov, M. Vobst, and V. I. Timoshenko, Methods of Studying the Properties of Liquid Metals and Semiconductors [in Russian] (Metallurgiya, Moscow, 1989).

    Google Scholar 

  7. N. N. Sirota and S. N. Chizhevskaya, Physics and Physical-Chemical Analysis [in Russian] (Gosstroiizdat, Moscow, 1957), p. 138.

    Google Scholar 

  8. V. M. Glazov, M. Kasymova, and A. R. Regel’, Fiz. Tekh. Poluprovodn. 13, 2049 (1979) [Sov. Phys. Semicond. 13, 1196 (1979)].

    Google Scholar 

  9. V. M. Glazov and O. D. Shchelikov, Fiz. Tekh. Poluprovodn. 18, 662 (1984) [Sov. Phys. Semicond. 18, 411 (1984)].

    Google Scholar 

  10. I. N. Frantsevich, in Questions of Powder Metallurgy and Strength of Materials [in Russian] (Izdat. Akad. Nauk SSSR, Kiev, 1956), Issue No. III, p. 3.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

Fiz. Tekh. Poluprovodn. 32, 429–431 (April 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Glazov, V.M., Shchelikov, O.D. Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III–V compounds (AlSb, GaSb, InSb, GaAs, InAs). Semiconductors 32, 382–384 (1998). https://doi.org/10.1134/1.1187400

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187400

Keywords

Navigation