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Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

  • Electronic and Optical Properties of Semiconductors
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Abstract

The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.

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References

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Authors and Affiliations

  1. Erevan State University, 375049, Erevan, Armenia

    É. M. Kazaryan & K. A. Mkhoyan

Authors
  1. É. M. Kazaryan
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  2. K. A. Mkhoyan
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Additional information

Fiz. Tekh. Poluprovodn. 32, 453–454 (April 1998)

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Kazaryan, É.M., Mkhoyan, K.A. Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field. Semiconductors 32, 404–405 (1998). https://doi.org/10.1134/1.1187404

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  • DOI: https://doi.org/10.1134/1.1187404

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