The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon V. V. BolotovG. N. KamaevV. E. Roslikov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 125 - 127
Stability of the photoresponse of Cd1−x ZnxTe crystals V. K. KomarV. P. MygalA. S. Phomin Electronic and Optical Properties of Semiconductors Pages: 128 - 130
Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type V. A. RomakaYu. V. StadnykYu. K. Gorelenko Electronic and Optical Properties of Semiconductors Pages: 131 - 136
Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals D. I. BletskanJ. J. MadyarV. N. Kabaciy Electronic and Optical Properties of Semiconductors Pages: 137 - 142
Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals O. A. ParfenyukM. I. IlashchukD. V. Korbutyak Electronic and Optical Properties of Semiconductors Pages: 143 - 147
Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components Yu. V. KlevkovV. P. MartovitskiĭV. S. Krivobok Electronic and Optical Properties of Semiconductors Pages: 148 - 154
Monte Carlo simulation of the Dember effect in n-InAs exposed to femtosecond pulse laser excitation V. L. Malevich OriginalPaper Pages: 155 - 160
Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor V. A. BogdanovaN. A. Davletkil’deevE. N. Sidorov Electronic and Optical Properties of Semiconductors Pages: 161 - 163
Photosensitivity of Pb1−x SnxTe:In films in the terahertz region of the spectrum A. N. AkimovV. G. ErkovV. N. Shumskiĭ Electronic and Optical Properties of Semiconductors Pages: 164 - 168
Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration M. F. BulatovYu. N. Parkhomenko Electronic and Optical Properties of Semiconductors Pages: 169 - 171
A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles Ya. P. Saliĭ Electronic and Optical Properties of Semiconductors Pages: 172 - 174
A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon A. A. EvtukhÉ. B. KaganovichN. A. Semenenko Semiconductor Structures, Interfaces, and Surfaces Pages: 175 - 179
Dynamics of the defects recharging in coarse-grained p-CdTe films Kh. Kh. IsmailovZh. ZhanabergenovS. Zh. Karazhanov Semiconductor Structures, Interfaces, and Surfaces Pages: 180 - 182
Methods for the doping of silicon layers in growth by sublimation MBE V. G. ShengurovS. P. SvetlovS. A. Denisov Semiconductor Structures, Interfaces, and Surfaces Pages: 183 - 189
A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures A. G. ZhdanG. V. ChuchevaE. I. Goldman Semiconductor Structures, Interfaces, and Surfaces Pages: 190 - 196
Properties of the CuInS2 surface and the effect of organic layers A. B. VerbitskiĭYa. I. VertsimakhaJ. Kois Semiconductor Structures, Interfaces, and Surfaces Pages: 197 - 201
Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation V. A. VolodinA. I. YakimovG. Yu. Mikhalev Low-Dimensional Systems Pages: 202 - 209
Persistent IR photoconductivity in InAs/GaAs structures with QD layers V. A. Kul’bachinskiĭV. A. RogozinV. A. Casian Low-Dimensional Systems Pages: 210 - 216
Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots S. I. Pokutniĭ Low-Dimensional Systems Pages: 217 - 223
The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots N. V. SibirevV. G. TalalaevP. Werner Low-Dimensional Systems Pages: 224 - 228
Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers N. V. VostokovYu. N. DrozdovM. V. Shaleev Low-Dimensional Systems Pages: 229 - 233
Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier J. A. BerashevichS. K. LazaroukV. E. Borisenko Amorphous, Vitreous, and Porous Semiconductors Pages: 234 - 239
Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals N. A. DavidenkoV. N. KokozayD. V. Shevchenko Amorphous, Vitreous, and Porous Semiconductors Pages: 240 - 248