Abstract
The efficiency of the introduction of donor centers in oxygen-containing Si by heat treatments at 450°C after preliminary hydrogenation in hydrogen plasma and irradiation with 60Co γ-ray photons was studied. It is shown that the highest rate of the donor-center introduction is observed in the samples that contain atomic hydrogen. Irradiation with 60Co γ-ray photons of Si with a layer preliminarily hydrogenated in hydrogen plasma leads to the release of atomic hydrogen from bound states. This makes the rate of the introduction of donor centers higher in subsequent heat treatments at 450°C.
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Original Russian Text © V.V. Bolotov, G.N. Kamaev, A.V. Noskov, S.A. Chernyaev. V.E. Roslikov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2. pp. 129–132.
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Bolotov, V.V., Kamaev, G.N., Noskov, A.V. et al. The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon. Semiconductors 40, 125–127 (2006). https://doi.org/10.1134/S1063782606020011
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DOI: https://doi.org/10.1134/S1063782606020011