Abstract
The role of the impurity acceptor band in the conductivity of the doped and compensated ZrNiSn semiconductor is assessed. A reconstruction model of the impurity band as a result of doping the semiconductor with acceptor impurities is suggested. The electronic structure of the Zr1−x ScxNiSn alloy is calculated. Oscillations of the magnetic susceptibility in the region of the metal-insulator transition (related to the Anderson transition) as the Zr1−x ScxNiSn composition is varied are observed for the first time. These oscillations are believed to be a manifestation of the Coulomb gap in the impurity band as the levels of doping and compensation of the semiconductor are varied.
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Original Russian Text © V.A. Romaka, Yu.V. Stadnyk, M.G. Shelyapina, D. Fruchart, V.F. Chekarin, T.P. Romaka, Yu.K. Gorelenko, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 136–141.
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Romaka, V.A., Stadnyk, Y.V., Shelyapina, M.G. et al. Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type. Semiconductors 40, 131–136 (2006). https://doi.org/10.1134/S1063782606020035
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DOI: https://doi.org/10.1134/S1063782606020035