Abstract
Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.
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Original Russian Text © V.A. Kul’bachinskii V.A. Rogozin, V.G. Kytin, R.A. Lunin, B.N. Zvonkov, Z.M. Dashevsky, V.A. Casian, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 215–222.
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Kul’bachinskiĭ, V.A., Rogozin, V.A., Kytin, V.G. et al. Persistent IR photoconductivity in InAs/GaAs structures with QD layers. Semiconductors 40, 210–216 (2006). https://doi.org/10.1134/S1063782606020187
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DOI: https://doi.org/10.1134/S1063782606020187