Abstract
The results of studying the absorption of infrared radiation by free charge carriers in the GaAs:Te single crystals, grown by the Czochralski method, had the electron concentration n 0=5×1017−6×1018 cm−3 are reported. An analysis of the spectral dependences of the absorption coefficient took into account the spatial correlation in the impurity-charge distribution. It is shown that the short-range correlation model makes it possible to account for the decrease in the absorption coefficient and a weakening of its spectral dependence, in the region of the impurity-mediated free-carrier absorption.
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Original Russian Text © V.A. Bogdanova. N.A. Semikolenova, E.N. Sidorov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2. pp. 166–168.
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Bogdanova, V.A., Davletkil’deev, N.A., Semikolenova, N.A. et al. Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor. Semiconductors 40, 161–163 (2006). https://doi.org/10.1134/S1063782606020084
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DOI: https://doi.org/10.1134/S1063782606020084