Abstract
The results of studying the growth of self-assembled Ge(Si) islands on relaxed Si1−xGex/Si(001) buffer layers (x≈25%), with a low surface roughness are reported. It is shown that the growth of self-assembled islands on the buffer SiGe layers is qualitatively similar to the growth of islands on the Si (001) surface. It is found that a variation in the surface morphology (the transition from dome-to hut-shaped islands) in the case of island growth on the relaxed SiGe buffer layers occurs at a higher temperature than for the Ge(Si)/Si(001) islands. This effect can be caused by both a lesser mismatch between the crystal lattices of an island and the buffer layer and a somewhat higher surface density of islands, when they are grown on an SiGe buffer layer.
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Original Russian Text © N.V. Vostokov, Yu.N. Drozdov, Z.F. Krasil’nik, O.A. Kuznetsov, D.N. Lobanov, A.V. Novikov, M.V. Shaleev, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 235–239.
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Vostokov, N.V., Drozdov, Y.N., Krasil’nik, Z.F. et al. Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers. Semiconductors 40, 229–233 (2006). https://doi.org/10.1134/S1063782606020217
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DOI: https://doi.org/10.1134/S1063782606020217