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Methods for the doping of silicon layers in growth by sublimation MBE

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Epitaxial layers doped with various impurities were grown by sublimation MBE on Si (100) substrates. Doping with phosphorus was controlled at electron densities ranging from 2×1013 to 1019 cm−3. A high dopant concentration of ∼1020 cm−3 was obtained from the evaporation of partly molten Si sources. It shown that the type and concentration of an impurity in the sublimation MBE process can be controlled by the fabrication of multilayer p +−n + structures.

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Authors and Affiliations

  1. Research Physicotechnical Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov & S. A. Denisov

  2. Insitute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603000, Russia

    D. V. Shengurov

Authors
  1. V. G. Shengurov
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  2. S. P. Svetlov
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  3. V. Yu. Chalkov
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  4. D. V. Shengurov
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  5. S. A. Denisov
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Original Russian Text © V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, D.V. Shengurov, S.A. Denisov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 188–194.

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Shengurov, V.G., Svetlov, S.P., Chalkov, V.Y. et al. Methods for the doping of silicon layers in growth by sublimation MBE. Semiconductors 40, 183–189 (2006). https://doi.org/10.1134/S106378260602014X

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  • DOI: https://doi.org/10.1134/S106378260602014X

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