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Stability of the photoresponse of Cd1−x ZnxTe crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

Variety and distribution of structural defects, as well as composition fluctuations determine individual properties and instability of photoresponse I of the Cd1−x ZnxTe-based detectors and spectrometers under severe operational conditions. It is shown that these phenomena are most completely represented by differential spectral characteristics I(hv) and related diagrams dI/dν=f(I).

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Original Russian Text © V.K. Komar, V.P. Mygal, S.V. Sulima, A.S. Phomin, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 133–135.

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Komar, V.K., Mygal, V.P., Sulima, S.V. et al. Stability of the photoresponse of Cd1−x ZnxTe crystals. Semiconductors 40, 128–130 (2006). https://doi.org/10.1134/S1063782606020023

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  • DOI: https://doi.org/10.1134/S1063782606020023

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