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Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration

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Abstract

The sequence of changes, in the cationic and anionic sublattice states in the (TmBiCa)3(FeGa)5O12 system grown using liquid-phase epitaxy on [111] Gd3Ga5O12 substrates as the calcium concentration varies, is suggested. There are critical values of bivalent impurity: at low concentrations (approximately up to 0.2 at %), Fe4+ is formed; at intermediate concentrations (0.25–0.3 at %), anion vacancies arise; then singly charged oxygen ions are formed.

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Original Russian Text © M.F. Bulatov, Yu.N. Parkhomenko, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 174–176.

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Bulatov, M.F., Parkhomenko, Y.N. Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration. Semiconductors 40, 169–171 (2006). https://doi.org/10.1134/S1063782606020102

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  • DOI: https://doi.org/10.1134/S1063782606020102

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