1. Quantum dot heterostructures: Fabrication, properties, lasers (Review)

   • N. N. Ledentsov
   • V. M. Ustinov
   • D. Bimberg

   OriginalPaper Pages: 343 - 365

2. Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra

   • V. A. Novikov
   • V. V. Peshev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 366 - 371

3. Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions

   • V. I. Obodnikov
   • E. G. Tishkovskii

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 372 - 374

4. Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon

   • Yu. V. Gorelkinskii
   • B. N. Mukashev
   • Kh. A. Abdullin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 375 - 381

5. Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III–V compounds (AlSb, GaSb, InSb, GaAs, InAs)

   • V. M. Glazov
   • O. D. Shchelikov

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 382 - 384

6. Optical absorption and photosensitivity of CuIn_xGa_1-x Se₂ thin film structures

   • Yu. V. Rud’
   • V. Yu. Rud’
   • V. F. Gremenok

   Electronic and Optical Properties of Semiconductors Pages: 385 - 388

7. On trapping of minority current carriers in n-type Cd_xHg_1-x Te at low temperatures

   • S. G. Gasan-zade
   • G. A. Shepel’skii

   Electronic and Optical Properties of Semiconductors Pages: 389 - 391

8. Short-wavelength photoluminescence of SiO₂ layers implanted with high doses of Si⁺, Ge⁺, and Ar⁺ ions

   • G. A. Kachurin
   • I. E. Tyschenko
   • K. Leo

   Electronic and Optical Properties of Semiconductors Pages: 392 - 396

9. Characteristic features of the defect formation process in Pb_1−x Sn_xSe(x⩽0.06)

   • A. N. Veis
   • N. A. Suvorova

   Electronic and Optical Properties of Semiconductors Pages: 397 - 400

10. Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg_1−x Mn_xTe in the spin-glass region

    • E. I. Georgitsé
    • V. I. Ivanov-Omskii
    • D. I. Tsypishka

    Electronic and Optical Properties of Semiconductors Pages: 401 - 403

11. Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

    • É. M. Kazaryan
    • K. A. Mkhoyan

    Electronic and Optical Properties of Semiconductors Pages: 404 - 405

12. Recombination of donor nickel excitons in the solid solutions ZnSe_1−y S_y:Ni

    • V. I. Sokolova
    • O. V. Dolzhenkov

    Electronic and Optical Properties of Semiconductors Pages: 406 - 408

13. Photosensitivity of thin-film structures based on laser-deposited CuIn(Te_xSe_1−x )₂ layers

    • I. V. Bodnar’
    • V. F. Gremenok
    • Yu. V. Rud’

    Semiconductors Structures, Interfaces, and Surfaces Pages: 409 - 411

14. Electric and photoelectric properties of n-Ga_xIn_1−x N/p-Si anisotypic heterojunctions

    • S. E. Aleksandrov
    • V. A. Zykov
    • D. M. Krasovitskii

    Semiconductors Structures, Interfaces, and Surfaces Pages: 412 - 416

15. Intraband absorption of light in quantum wells induced by electron-electron collisions

    • G. G. Zegrya
    • V. E. Perlin

    Low-Dimensional Systems Pages: 417 - 422

16. Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra

    • P. G. Eliseev
    • I. V. Akimova

    Low-Dimensional Systems Pages: 423 - 427

17. Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function

    • P. G. Eliseev
    • I. V. Akimova

    Low-Dimensional Systems Pages: 428 - 433

18. Staebler-Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon

    • O. A. Golikova
    • M. M. Kazanin
    • V. Kh. Kudoyarova

    Amorphous, Glassy and Porous Semiconductors Pages: 434 - 438

19. Study of optical absorption in thin films of a-As₂Se₃ by photocapacitance spectroscopy

    • I. A. Vasil’ev
    • S. D. Shutov

    Amorphous, Glassy and Porous Semiconductors Pages: 439 - 442

20. Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon

    • E. A. Shelonin
    • M. V. Naidenkova
    • I. E. Maronchuk

    Amorphous, Glassy and Porous Semiconductors Pages: 443 - 445

21. Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate

    • A. S. Kyuregyan

    The Physics of Semiconductor Devices Pages: 446 - 451

22. Amplification of electromagnetic waves at odd harmonics of the cyclotron resonance of heavy holes with negative effective masses in semiconducting diamond

    • V. A. Chuenkov

    The Physics of Semiconductor Devices Pages: 452 - 455

23. Yaroslav Evgen’evich Pokrovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) (On his 70th birthday)

    Personalia Pages: 456 - 456