Leading-edge laser production using two-inch technology R. SimesR. M. CapellaH. P. Mayer Laser Diodes Pages: 445 - 454
DFB lasers with integrated electroabsorption modulator J. J. M. BinsmaP. I. KuindersmaP. J. A. Thijs Laser Diodes Pages: 455 - 462
High-temperature operation of AlGaInAs/InP lasers1994 C. E. ZahR. BhatT. P. Lee Laser Diodes Pages: 463 - 473
Fabrication and characteristics of double-fused vertical-cavity lasers D. I. BabićK. StreubelE. L. Hu Laser Diodes Pages: 475 - 485
Fabrication and low threshold current density CW operation of GaInAsP/InP multiple-reflector microcavity laser K.-C. ShinM. TamuraS. Arai Laser Diodes Pages: 487 - 493
High-power 1.625-μm strained multiple-quantum-well lasers as a light source for optical time-domain reflectometers T. MunakataY. KashimaH. Takano Laser Diodes Pages: 495 - 502
High output power operation of 1.3-μm strained MQW lasers with low threshold currents at high temperature M. KitoS. KimuraY. Matsui Laser Diodes Pages: 503 - 511
High power and narrow lateral far-field divergence 1.5-μm eye-safe pulsed laser diodes with flared waveguide T. TamanukiT. SasakiM. Kitamura Laser Diodes Pages: 513 - 517
Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas H. B. SunY. D. LiS. Y. Liu Laser Diodes Pages: 519 - 525
InGaAsP/InP 1.55-μm lasers with chemically assisted ion beam-etched facets J. DaleidenK. EiseleJ. D. Ralston Laser Diodes Pages: 527 - 532
Four-wavelength DBR laser array with waveguide couplers fabricated using selective MOVPE growth Y. KatohT. KuniiT. Kamijoh Laser Diodes Pages: 533 - 540
Current spreading effects in 680-nm-band self-sustained pulsating AlGalnP visible laser diodes H. AdachiS. KamiyamaI. Kidoguchi Laser Diodes Pages: 541 - 546
Self-organization mechanism of GalnP quantum wires in (GaP) m /(lnP) m short-period binary superlattices for GalnP/AllnP multi-quantum-wire (MQWR) lasers J. YoshidaK. KishinoA. Kikuchi Laser Diodes Pages: 547 - 556
Heterodyne receiver PICs as the first monolithically integrated tunable receivers for OFDM system applications R. KaiserD. TrommerM. Hamacher Photodiodes Pages: 565 - 573
A strained InAIAs/InGaAs superlattice avalanche photodiode with a waveguide structure for low bias-voltage operation S. HanataniH. KitanoS. Tanaka Photodiodes Pages: 575 - 581
Wavelength tuning by quantum well electrorefraction in a grating-assisted vertical coupler filter with InGaAsP/InAIGaAs MQW waveguide W. VanderbauwhedeI. MoermanP. Demeester Optical Integrated Circuits Pages: 583 - 590
Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS) H. SakataK. UtakaY. Matsushima Optical Integrated Circuits Pages: 591 - 597
Type 1.5 coupled quantum wells for electroabsorption modulation with low electric fields R. T. SaharaM. MatsudaH. Soda Optical Integrated Circuits Pages: 599 - 604
Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module H. TanakaM. HoritaY. Takahashi Optical Integrated Circuits Pages: 605 - 612
Reduction of inelastic scattering effect by introduction of GalnAs/GalnP strain-compensated superlattice into multi-quantum barriers T. LohT. MiyamotoK. Iga Materials and Physics Pages: 613 - 622
