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Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

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Abstract

We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

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Author notes

  1. K. Utaka

    Present address: School of Science and Engineering, WASEDA University, 3-4-1 Ohkubo, Shinjyuku-ku, 169, Tokyo, Japan

Authors and Affiliations

  1. KDD R&D Laboratories, 2-1-15 Ohara, 356, Kamifukuoka-shi, Saitama, Japan

    H. Sakata, K. Utaka & Y. Matsushima

Authors
  1. H. Sakata
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  2. K. Utaka
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  3. Y. Matsushima
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Sakata, H., Utaka, K. & Matsushima, Y. Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). Opt Quant Electron 28, 591–597 (1996). https://doi.org/10.1007/BF00943629

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  • DOI: https://doi.org/10.1007/BF00943629

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