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Optical and Quantum Electronics

, Volume 28, Issue 5, pp 613–622 | Cite as

Reduction of inelastic scattering effect by introduction of GalnAs/GalnP strain-compensated superlattice into multi-quantum barriers

  • T. Loh
  • T. Miyamoto
  • Y. Kurita
  • F. Koyama
  • K. Iga
Materials and Physics

Abstract

The effect of inelastic scattering on the electron reflection in multi-quantum barriers (MQBs) has been examined using the damped resonant tunnelling model for the first time. The electron reflectivity in the virtual barrier region for unstrained GalnAs/InP MQB deteriorates below 100% by about 10% for phase relaxation time of 0.22ps. We propose a strain-compensated GalnAs/GalnP MQB which not only has virtual barrier 4 times as high as that of an unstrained MQB, but whose reflectivity deterioration is reduced to less than 5% in comparison with 10% for unstrained MQB for the same phase relaxation time. We have also successfully grown a Ga0.25In0.75As (1.5% compressive) well/Ga0.25In0.75P (1.2% tensile) barrier short-period superlattice with six wells by chemical beam epitaxy, which exhibits the possibility of fabrication of the strain-compensated MQBs.

Keywords

Reflection Relaxation Time Communication Network Inelastic Scattering Scattering Effect 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1996

Authors and Affiliations

  • T. Loh
    • 1
  • T. Miyamoto
    • 1
  • Y. Kurita
    • 1
  • F. Koyama
    • 1
  • K. Iga
    • 1
  1. 1.Precision and Intelligence LaboratoryTokyo Institute of TechnologyYokohamaJapan

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