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High output power operation of 1.3-μm strained MQW lasers with low threshold currents at high temperature

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Abstract

We have investigated the temperature dependencies of the slope efficiency and the threshold current for strained multiquantum well (MQW) lasers as a parameter of the well number. Smaller well numbers mean larger temperature dependencies of the slope efficiency and the threshold current, while larger well numbers mean larger internal loss and broadening of the photoluminescence linewidth of the MQW structure. Furthermore, the change in the slope efficiency with temperature change is related to the change in internal loss. In this work, the 1.3-μm strained MQW laser with a compressive strain of 1.0% and 7 wells shows the highest output power of 6.8 mW for an injection current of 50 mA and the lowest threshold current of 5.5 mA at 85°C, and the lowest variation in output power of 2.0 dB from 25–85°C at injection current of 50 mA.

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Authors and Affiliations

  1. Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd, 3-1-1 Yagumonakamachi, 570, Moriguchi, Osaka, Japan

    M. Kito, N. Otsuka, K. Fujihara, M. Ishino & Y. Matsui

  2. Matsushita Electronics Corporation, 617, Nagaokakyo, Kyoto, Japan

    S. Kimura

Authors
  1. M. Kito
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  2. S. Kimura
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  3. N. Otsuka
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  4. K. Fujihara
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  5. M. Ishino
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  6. Y. Matsui
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Kito, M., Kimura, S., Otsuka, N. et al. High output power operation of 1.3-μm strained MQW lasers with low threshold currents at high temperature. Opt Quant Electron 28, 503–511 (1996). https://doi.org/10.1007/BF00943618

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  • DOI: https://doi.org/10.1007/BF00943618

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