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A strained InAIAs/InGaAs superlattice avalanche photodiode with a waveguide structure for low bias-voltage operation

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Abstract

An InAIAs/InGaAs superlattice (SL) multiplication layer operating at an IC-power supply voltage was realized by introducing strain into the SL. Using this SL as an absorption and multiplication layer, edge-coupled InAIAs/InGaAs SL avalanche photodiodes with waveguide structures were demonstrated. An avalanche multiplication factor larger than 10 was achieved at a bias voltage of less than 7V. A wide 3 dB bandwidth of 8 GHz was obtained at a multiplication factor of 3 and a wavelength of 1.3 μm.

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Authors and Affiliations

  1. Telecommunications Division, Hitachi Ltd, Totsuka, 244, Yokohama, Japan

    S. Hanatani & H. Kitano

  2. Central Research Laboratory, Hitachi Ltd, Kokubunji, 185, Tokyo, Japan

    M. Shishikura & S. Tanaka

Authors
  1. S. Hanatani
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  2. H. Kitano
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  3. M. Shishikura
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  4. S. Tanaka
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Hanatani, S., Kitano, H., Shishikura, M. et al. A strained InAIAs/InGaAs superlattice avalanche photodiode with a waveguide structure for low bias-voltage operation. Opt Quant Electron 28, 575–581 (1996). https://doi.org/10.1007/BF00943627

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  • DOI: https://doi.org/10.1007/BF00943627

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