Skip to main content
SpringerLink
Log in

Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas

  • Laser Diodes
  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

Iron-doped semi-insulating InP has been grown by chloride vapour-phase epitaxy (VPE) using nitrogen mixed with hydrogen as carrier. Reducing hydrogen partial pressure by the introduction of nitrogen greatly improves the transport of FeCl2. The influence of hydrogen partial pressure on the Fe transport, and therefore on the Fe incorporation, has been studied theoretically and experimentally. With a relatively slow growth rate, InP film with a high Fe concentration is easily obtained. Quantum-well laser diodes with semi-insulating InP(Fe) stripe-confinement have been fabricated successfully.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D. P. Wilt, J. Long, W. C. Dautremont-smith, M. W. Focht, T. M. Shen andR. L. Hartman,Electron. Lett. 22 (1986) 869.

    Google Scholar 

  2. M. Sugawara, M. Kondo, K. Nakai, A. Yamaguchi andK. Nakujima,Appl. Phys. Lett. 50 (1987) 1432.

    Google Scholar 

  3. J. A. Long, V. G. Riggs andW. D. JohnstoneJr,Crystal Growth 69 (1984) 10.

    Google Scholar 

  4. Y. Kato, A. Usui, T. Kamejima, S. Sugo andK. Kasahara,Proc. 13th Int. Symp. GaAs and RElated Compounds, Las Vegas, NV, 1986, Institute of Physics Conference Series no. 83, edited by W. T. Lindly (Institute of Physics, Bristol, 1987) p. 395.

    Google Scholar 

  5. P. L. Giles, P. Davies andN. B. Hasdell,J. Crystal Growth 61 (1983) 695.

    Google Scholar 

  6. R. F. Karlicek Jr,J. Crystal Growth 91 (1988) 33.

    Google Scholar 

  7. B. P. Jain andR. K. Purohit,Prog. Crystal Growth Charact. 9 (1983) 51.

    Google Scholar 

  8. T. Takanohashi, K. Nakai andK. Nakajima,Japan. J. Appl. Phys. 27 (1988) 133.

    Google Scholar 

  9. A. T. Macrander, J. A. Long, V. G. Riggs, A. F. Bloemecks andW. D. Johnston Jr,Appl. Phys. Lett. 45 (1984) 1297.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, Jilin University, 130023, Changchun, China

    H. B. Sun, Y. D. Li, S. Y. Chen, L. Z. Hu, Y. X. Zhang & S. Y. Liu

Authors
  1. H. B. Sun
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Y. D. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Y. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. Z. Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Y. X. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. Y. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Sun, H.B., Li, Y.D., Chen, S.Y. et al. Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas. Opt Quant Electron 28, 519–525 (1996). https://doi.org/10.1007/BF00943620

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00943620

Keywords

Search

Navigation