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High-temperature operation of AlGaInAs/InP lasers1994

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Abstract

We discuss the design of uncooled lasers which minimizes the change in both threshold current and slope efficiency over the temperature range from−40 to +85°C [1]. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the Al x Ga y In1−x−y As/InP material system [1] instead of the conventional Ga x In1−x As y P1−y /InP material system. Experimentally, we have investigated strained quantum well lasers with three different barrier layers and confirmed that the static and dynamical performance of the lasers with insufficient carrier confinement degrades severely under high-temperature operation [2]. With an optimized barrier layer, the Al x Ga y In1−x−y As/InP strained quantum well lasers show superior hightemperature performance, such as a small drop of 0.3 dB in slope efficiency when the heat sink temperature changes from 25 to 100°C [3], a maximum CW operation temperature of 185°C [4], a thermally-limited 3-dB bandwidth of 13.9 GHz at 85°C [2], and a mean-time-to-failure of 33 years at 100°C and 10 mW output power [5].

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  1. Bellcore, NVC3Z385, 331 Newman Springs Rd, 07701, Red Bank, NJ, USA

    C. E. Zah, R. Bhat & T. P. Lee

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  1. C. E. Zah
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  2. R. Bhat
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  3. T. P. Lee
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Zah, C.E., Bhat, R. & Lee, T.P. High-temperature operation of AlGaInAs/InP lasers1994. Opt Quant Electron 28, 463–473 (1996). https://doi.org/10.1007/BF00943614

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  • DOI: https://doi.org/10.1007/BF00943614

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