The direct determination of the vacancy concentration andP-T phase diagram of Hg0.8Cd0.2Te and Hg0.6Cd0.4Te by dynamic mass-loss measurements Heribert WiedemeierYi Gao Sha OriginalPaper Pages: 761 - 771
Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process J. O. CristD. C. Look OriginalPaper Pages: 773 - 776
Growth of CdGeAs2 single crystals by the chemical vapor transport method F. P. BaumgartnerM. Lux-SteinerE. Bucher OriginalPaper Pages: 777 - 781
Growth of InAs by MOVPE using TBAs and TMIn S. K. HaywoodR. W. MartinP. J. Walker OriginalPaper Pages: 783 - 788
Si-implantation into GaAs grown on Si Mulpuri V. RaoR. Sachidananda BabuNick Bottka OriginalPaper Pages: 789 - 794
Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor K. KikutaT. KikkawaJ. Sone OriginalPaper Pages: 795 - 799
Surface wave excitation auger electron spectroscopy of lnGaAs/GaAs(001) grown by alternate molecular-beam epitaxy Hiroshi NakayamaTuyoshi TakenakaKazuyuki Ueda OriginalPaper Pages: 801 - 808
Thickness estimation of silicon-on-lnsulator by means of the fourier transform of bilinearly transformed infrared reflectance data Pieter L. SwartBeatrys M. Lacquet OriginalPaper Pages: 809 - 814
Long-storage-time MIS capacitors formed on InSb films grown by MOCVD James T. HallMelvin M. MoriwakiRobert M. Biefeld OriginalPaper Pages: 815 - 820
Structural characterization of Ti and Pt thin films on GaAs(100) substrate X. WuE. S. YangN. D. Theodore OriginalPaper Pages: 821 - 823
The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P Sarah R. KurtzJ. M. OlsonE. Beck OriginalPaper Pages: 825 - 828
Electronic defect characterization in silicon H. G. GrimmeissM. KlevermanP. Omling OriginalPaper Pages: 837 - 849
Metalorganic vapor phase epitaxial growth, characterization and annealing experiments on InP doping superlattices A. MolassiotiF. ScholzY. Gao OriginalPaper Pages: 851 - 856