Skip to main content
SpringerLink
Log in

Si-implantation into GaAs grown on Si

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

200 keV Si implantations were performed in the dose range of 5 × 1012 − 1 × 1014 cm−2 in GaAs grown on Si. For comparison implants were also performed in GaAs layers grown on GaAs substrates. Implanted layers were annealed by both furnace and halogen lamp rapid thermal anneals. Significantly lower donor activations were observed in GaAs layers grown on Si substrates than in the layers grown on GaAs substrates. Extremely low dopant activations were obtained for Be implants in GaAs grown on Si. Photoluminescence and photoreflectance measurements were also performed on the implanted material.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. P. Gale, J. C. C. Fan, B-Y. Tsaur, G. W. Turner and F. M. Davis, IEEE Electron Dev. Lett. EDL-2,169 (1981).

  2. J. P. van der Ziel, R. D. Dupuis and J. C. Bean, Appl. Phys. Lett.48, 1713 (1986).

    Article  Google Scholar 

  3. R. J. Fischer, N. Chand, W. F. Kopp, C-K. Peng, H. Morkoc, K. R. Gleason and D. Scheitlin, IEEE Trans. Electron Dev. ED-33,206 (1986).

  4. R. J. Fischer, W. F. Kopp, J. S. Gedymin and H. Morkoc, IEEE Trans. Electron Dev.ED-33, 1407 (1986).

    Google Scholar 

  5. H. K. Choi, G. W. Turner, T. H. Windhorn and B.-Y. Tsaur, IEEE Trans. Electron Dev.ED-33, 1857 (1986).

    Google Scholar 

  6. H. Scichijo, J. W. Lee, W. V. Mclevige and A. Taddiken, IEEE Electron Dev. Lett. EDL-8,121 (1987).

  7. T. Won, C. W. Litton, H. Morkoc and A. Yariv, Electron. Lett. 24,588, (1988).

    Article  Google Scholar 

  8. N. Chand, F. Ren, S. J. Pearton, N. J. Shah and A. Y. Cho, IEEE Electron Dev. Lett. EDL-8,185 (1987).

  9. S. M. Vernon, S. J. Pearton, J. M. Gibson, K. T. Short and V. E. Haven, Appl. Phys. Lett.50, 1161 (1987).

    Article  CAS  Google Scholar 

  10. T. S. Kim and Y. C. Kao, MRS Fall meeting, 1989, Boston, Mass., Symp. D. Abstract #D 2.9.

  11. N. Bottka, D. K. Gaskill, R. J. M. Griffiths, R. R. Bradley, T. B. Joyce, C. Ito and D. McIntyre, J. Cryst. Growth 93,481 (1988).

    Article  CAS  Google Scholar 

  12. K. S. Seo, S. Dhar and P. K. Bhattacharya, Appl. Phys. Lett. 47,500 (1985).

    Article  CAS  Google Scholar 

  13. S. J. Pearton and K. D. Cummings, J. Appl. Phys.58, 1500 (1985).

    Article  CAS  Google Scholar 

  14. M. V. Rao, M. P. Keating and P. E. Thompson, J. Electron. Mater. 17,315 (1988).

    CAS  Google Scholar 

  15. S. Miyazawa and Y. Namishi, Jpn. J. Appl. Phys. 22,419 (1983).

    CAS  Google Scholar 

  16. P. E. Thompson and H. B. Dietrich, J. Electrochem. Soc.135, 1240 (1988).

    Article  Google Scholar 

  17. M. L. Gray, J. M. Parsey, Jr., S. J. Pearton, K. T. Short, R. E. Ahrens, L. Sargent and J. S. Blakemore, J. Appl. Phys.64, 1464 (1988).

    Article  CAS  Google Scholar 

  18. U. Heim and P. Hiesinger, Phys. Status Solidi B 66,461 (1974).

    CAS  Google Scholar 

  19. D. J. Ashen, P. J. Dean, D. T. J. Hurle, J. B. Mullin, A. M. White and P. D. Greene, J. Phys. Chem. Solids36,1041 (1975).

    Article  CAS  Google Scholar 

  20. K. Akimoto, M. Dohsen, M. Arai and N. Watanabe, Appl. Phys. Lett. 45,922 (1984).

    Article  CAS  Google Scholar 

  21. T. Soga, S. Hattori, S. Sakai and M. Umeno, J. Cryst. Growth 77,498 (1986).

    Article  CAS  Google Scholar 

  22. G. Landa, R. Carles, C. Fontaine, E. Bedel and A. Munoz-Yague, J. Appl. Phys. 66,196 (1989).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, VA

    Mulpuri V. Rao, R. Sachidananda Babu & Alok K. Berry

  2. Naval Research Laboratory, 20375-5000, Washington, D.C.

    Harry B. Dietrich & Nick Bottka

Authors
  1. Mulpuri V. Rao
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Sachidananda Babu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Alok K. Berry
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Harry B. Dietrich
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Nick Bottka
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Rao, M.V., Babu, R.S., Berry, A.K. et al. Si-implantation into GaAs grown on Si. J. Electron. Mater. 19, 789–794 (1990). https://doi.org/10.1007/BF02651386

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02651386

Keywords

Search

Navigation