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Growth of CdGeAs2 single crystals by the chemical vapor transport method

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Abstract

We have grown CdGeAs2 single crystals by chemical vapor transport (CVT), a method not previously applied for this compound. The crystallographic data of this chalcopyrite (cell parametersa 0 = 5.9456 ± 0.0001Å, c0 = 11.2131 ± 0.0007Å) and its electrical transport properties are reported. Predominantly n-type crystals are obtained (at RTn = 1 · 1017cm−3, μn = 2000 cm2(Vs)−1). Vacuum heat treatment at 500° C yields a type conversion fromn- to p-type. In all p-type samples the minority carrier mobility is calculated to be larger than 10000 cm2(Vs)−1.

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References

  1. R. C. J. Draper and A. Miller, Inst. Phys. Conf. Ser.35, 265 (1977).

    Google Scholar 

  2. G. W. Iseler, H. Kildal and N. Menyuk, Inst. Phys. Conf. Ser.35, 73 (1977).

    Google Scholar 

  3. G. W. Iseler, H. Kildal and N. Menyuk, J. Electron. Mater. 7, 737 (1978).

    Google Scholar 

  4. A. L. Gentile and O. M. Stafsudd, Mat. Res. Bull.9,105 (1974).

    Article  CAS  Google Scholar 

  5. R. S. Feigelson, R. K. Route and H. W. Swarts, J. Cryst. Growth28, 138 (1975).

    Article  CAS  Google Scholar 

  6. R. S. Feigelson and R. K. Route, J. Cryst. Growth49, 261 (1980).

    Article  CAS  Google Scholar 

  7. A. S. Borshchevsky, R. K. Route and R. S. Feigelson, Mat. Res. Bull.15, 409 (1980).

    Article  CAS  Google Scholar 

  8. H. Kildal, Air Force Material Lab-Technical Report, AFML- TR-72-277 (1972).

  9. V. M. Glazov, V. V. Lebedev, A. D. Molodyk and A. S. Pash- inkin, Inorg. Mater.15, 1363 (1979).

    Google Scholar 

  10. M. Avirovic, M. Lux-Steiner, U. Elrod, J. Hönigschmid and E. Bucher, J. Cryst. Growth67, 185 (1984).

    Article  CAS  Google Scholar 

  11. H. Pfister, Acta Cryst.11, 221 (1958).

    Article  CAS  Google Scholar 

  12. N. A. Goryunova, F. P. Kesamanly and E. O. Osmanov, Sov. Phys.-Solid St.5, 1484 (1963).

    Google Scholar 

  13. S. I. Borisenko, G. F. Karavaev, S. I. Skachkov and V. G. Tyuterev, Sov. Phys. Semicond.17, 1406 (1983).

    Google Scholar 

  14. S. I. Borisenko, G. F. Karavaev, S. I. Skachkov and V. G. Tyuterev, Sov. Phys. Semicond.20, 767–70 (1986).

    Google Scholar 

  15. S. M. Sze, Physics of Semiconductor Devices (Wiley-Inter- science, New York, 1981), 2nd ed., Chap. 1.

    Google Scholar 

  16. S. Isomura, S. Takahashi and K. Masumoto, Jpn. J. Appl. Phys.16, 1723 (1977).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, University of Konstanz, D-7750, Konstanz, Fed. Rep. of Germany

    F. P. Baumgartner, M. Lux-Steiner & E. Bucher

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  1. F. P. Baumgartner
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  2. M. Lux-Steiner
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  3. E. Bucher
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Baumgartner, F.P., Lux-Steiner, M. & Bucher, E. Growth of CdGeAs2 single crystals by the chemical vapor transport method. J. Electron. Mater. 19, 777–781 (1990). https://doi.org/10.1007/BF02651384

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  • DOI: https://doi.org/10.1007/BF02651384

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