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The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P

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Abstract

Selenium doping at an electron concentration of 1018 – 1019 cm−3 is shown to cause an increase in both the band gap and the disorder of Ga0.5In0.5P films grown by metalorganic chemical vapor deposition on GaAs substrates. The effect of selenium is shown to be very similar to that of the p-type dopants, zinc and magnesium. Selenium doping is also shown to have a dramatic smoothing effect on the surface morphology of Ga0.5In0.5P films.

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Authors and Affiliations

  1. Solar Energy Research Institute, 80401, Golden, CO

    Sarah R. Kurtz, J. M. Olson, J. P. GoraL, A. Kibbler & E. Beck

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  1. Sarah R. Kurtz
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  2. J. M. Olson
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  3. J. P. GoraL
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  4. A. Kibbler
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Kurtz, S.R., Olson, J.M., GoraL, J.P. et al. The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P. J. Electron. Mater. 19, 825–828 (1990). https://doi.org/10.1007/BF02651392

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  • DOI: https://doi.org/10.1007/BF02651392

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