Abstract
In an attempt to understand the Schottky barrier behavior of Ti/Pt/GaAs and Pt/Ti/ GaAs bimetal Schottky diodes, we have investigated the interfacial morphology of Ti and Pt thin films on GaAs(l00) substrate. The characterization was based on coverage profiling of Auger electron spectroscopy in conjunction with transmission electron microscopy. Emphasis was placed on film uniformity and atomic interdiffusion. The results showed Ga and As outdiffusion in Pt/GaAs interface and some oxygen incorporated in Ti film, but no evidence of clustering for both metal/GaAs systems.
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Wu, X., Yang, E.S. & Theodore, N.D. Structural characterization of Ti and Pt thin films on GaAs(100) substrate. J. Electron. Mater. 19, 821–823 (1990). https://doi.org/10.1007/BF02651391
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DOI: https://doi.org/10.1007/BF02651391