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Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor

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Abstract

The properties of poly-Si/GaAs layered films on Si for use in wide bandgap emitters for Si heterojunction bipolar transistors (Si-HBTs), were studied. A smooth GaAs film surface grown on Si was obtained at low temperature (200° C) from the initial stage of growth. The x-ray diffraction (XRD) results indicated that strong GaAs orientation (111) was obtained for the poly-Si/GaAs/Si-substrate layered structure after annealing at 800° C for 20 sec. Secondary ion mass spectroscopy (SIMS) profiles indicated that impurity diffusion from the GaAs layer into the p-type Si substrate was negligible at 800° C. The electrical characteristics forn-poly-Si/n-GaAs/p-Si-substrate heterojunction diodes were also investigated.

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Authors and Affiliations

  1. Microelectronics Research Laboratories, NEC Corporation, 1120 Shimokusawa, 229, Sagamihara, Japan

    K. Kikuta, T. Kikkawa, M. Kawanaka & J. Sone

  2. Fundamental Research Laboratories, 34 Miyukigaoka, 305, Tukuba City, Japan

    M. Kawanaka & J. Sone

  3. NEC Corporation, 1120 Shimokusawa 229, Japan

    M. Kawanaka & J. Sone

  4. 34 Miyukigaoka, 305, Tukuba City, Japan

    K. Kikuta, T. Kikkawa, M. Kawanaka & J. Sone

Authors
  1. K. Kikuta
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  2. T. Kikkawa
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  3. M. Kawanaka
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  4. J. Sone
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Kikuta, K., Kikkawa, T., Kawanaka, M. et al. Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor. J. Electron. Mater. 19, 795–799 (1990). https://doi.org/10.1007/BF02651387

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  • DOI: https://doi.org/10.1007/BF02651387

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