Abstract
The growth of bulk heteroepitaxial layers of InAs on GaAs substrates by atmospheric pressure MOVPE is described. Tertiarybutylarsine [TBAs] and trimethylindium [TMIn] were used as the precursors. We present a study of the variation of morphology and electrical quality of the layers whilst varying the V/III ratio and growth temperature. The morphology of the layers varied between a lumpy surface consisting of elemental indium [excess group III] through smooth specular layers to dendritic growth [excess group V]. The morphology was also affected by the temperature, with an excess indium surface below 460° C and varying through specular surfaces between 480 - 540° C and bumpy irregular surfaces above 550° C. The electrical quality of the layers was poor when the morphology was poor, but showed a peak in mobility at 480° C and a V/III ratio of 0.83:1. The maximum mobility at 77 K was >32,000 cm2/Vs with a carrier concentration of 7.1 × 1015 cm-3.
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S. K. Haywood, R. W. Martin, N. J. Mason and P. J. Walker, J. Cryst. Growth97, 489 (1989).
S. K. Haywood, A. B. Henriques, D. F. Howell, N. J. Mason, R. J. Nicholas and P. J. Walker, Inst. Phys. Conf. Ser. 91,271 (1988).
L. F. Luo, R. Beresford, W. I. Wang and H. Munekata, Appl. Phys. Lett.55, 789, (1989).
S. K. Haywood, R. W. Martin, N. J. Mason, R. J. Nicholas and P. J. Walker, J. Cryst. Growth, in press.
S. K. Haywood, A. B. Henriques, N. J. Mason, R. J. Nicholas and P. J. Walker, Semicond. Sci. Tech.3, 315 (1988).
S. K. Haywood, N. J. Mason and P. J. Walker, J. Crys. Growth93, 56 (1988).
C. Goodings, D. Jebb, N. J. Mason and P. J. Walker, J. Cryst. Growth96, 12 (1989).
P. D. Agnello and S. K. Ghandhi, J. Electrochem. Soc.135, 1530 (1988).
J. S. Roberts, J. Vac. Sci. Tech. B1, 850 (1983).
Cyanamid, personal communication.
R. M. Lum, J. K. Klingert and D. W. Kisker, J. Appl. Phys.66, 652 (1989).
L. J. Giling, personal communication.
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Haywood, S.K., Martin, R.W., Mason, N.J. et al. Growth of InAs by MOVPE using TBAs and TMIn. J. Electron. Mater. 19, 783–788 (1990). https://doi.org/10.1007/BF02651385
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DOI: https://doi.org/10.1007/BF02651385