Skip to main content
SpringerLink
Log in

Electronic defect characterization in silicon

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

A brief outline is presented on recent developments in deep-level characterization and identification in semiconductors which have been made possible by the application of methods other than junction space charge measurements. Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photothermal ionization spectroscopy is discussed in more detail.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. See for example R. H. Bube, Photoconductivity of Solids, John Wiley & Sons, Inc., New York, 1960.

    Google Scholar 

  2. See for example W. Hoogenstraaten, Thesis, University of Amsterdam (1958).

  3. G. Björklund and H. G. Grimmeiss, Phys. Status Solidi42, K1 (1970).

    Google Scholar 

  4. C. T. Sah, L. Forbes, L. L. Rosier and A. F. Tasch, Solid State Electron.13, 759 (1970).

    Article  Google Scholar 

  5. D. V. Lang, J. Appl. Phys.45, 3014 and 3023 (1974).

    Article  CAS  Google Scholar 

  6. See for example G. W. Ludwig, Phys. Rev.137, A1520 (1965).

    Article  Google Scholar 

  7. H. G. Grimmeiss, E. Janzén, H. Ennen, O. Schirmer, J. Schneider, R. Wörner, C. Holm, E. Sirtl and P. Wagner, Phys. Rev.B24, 4571 (1981).

    Google Scholar 

  8. T. M. Lifshits, N. P. Likhtman and V. I. Sidorov. Fiz. Tekh. Poluprov. 2, 782 (1968); Sh. M. Kogan and T. M. Lifshits, Phys. Status Solidi (a)39, 11 (1977) and references therein.

    CAS  Google Scholar 

  9. J. M. Kahn, PhD Thesis, University of California at Berke- ley (1986).

  10. H. J. Queisser, FestkörperproblemeXI, 45 (1971).

    Google Scholar 

  11. W. Kohn and J. M. Luttinger, Phys. Rev.98, 915 (1955).

    Article  CAS  Google Scholar 

  12. W. E. Krag and H. J. Zeiger, Phys. Rev. Lett.8, 485 (1962).

    Article  CAS  Google Scholar 

  13. W. E. Krag, W. H. Kleiner and H. J. Zeiger, Phys. Rev.B33, 8304 (1986).

    Google Scholar 

  14. H. G. Grimmeiss and E. Janzén, in Defects in Semiconduc- tors, Proc. Mat. Res. Soc. Annual Meeting, 1982.

  15. E. Janzén, R. Stedman, G. Grossmann and H. G. Grimmeiss, Phys. Rev. B28, 1907 (1984).

    Article  Google Scholar 

  16. A. Zunger, Solid State Phys.39, 275 (1987).

    Article  Google Scholar 

  17. H. G. Grimmeiss, L. Montelius and K. Larsson, Phys. Rev. B37, 6916 (1988).

    Article  CAS  Google Scholar 

  18. M. Scheffler, F. Beeler, O. Jepsen, O. Gunnarsson, O. K. An- dersen and C. B. Bachelet, J. Electron. Mater.14a, 45 (1985).

    Google Scholar 

  19. G. Armelles, J. Barrau, M. Brousseau, B. Pajot and C. Naud, Solid State Commun.56, 303 (1985).

    Article  CAS  Google Scholar 

  20. M. Kleverman, J. Olajos and H. G. Grimmeiss, Phys. Rev.B35, 4093 (1987).

    Google Scholar 

  21. M. Kleverman, J. Olajos and H. G. Grimmeiss, Phys. Rev.B37, 2613 (1988).

    Google Scholar 

  22. J. Olajos, M. Kleverman and H. G. Grimmeiss, Phys. Rev.B38, 10633 (1988).

    Google Scholar 

  23. T. Bever, P. Emanuelsson, M. Kleverman and H. G. Grim- meiss, Appl. Phys. Lett.55, 254 (1989).

    Article  Google Scholar 

  24. E. Janzén, G. Grossman, R. Stedman and H. G. Grimmeiss, Phys. Rev.B31, 8000 (1985).

    Google Scholar 

  25. K. Huang and A. Rhys, Proc. Roy. Soc.204, 406 (1950).

    Article  CAS  Google Scholar 

  26. G. D. Watkins and W. B. Fowler, Phys. Rev.B16, 4524 (1977).

    Google Scholar 

  27. W. Harrison, Phys. Rev.104, 1281 (1956).

    Article  CAS  Google Scholar 

  28. P. Omling, private communication.

  29. P. Omling, P. Emanuelsson, W. Gehlhoff and H. G. Grim- meiss, Solid State Commun.70, 807 (1989).

    Article  CAS  Google Scholar 

  30. J. Olajos, B. Bech-Nielsen, M. Kleverman. P. Omling, P. Emanuelsson and H. G. Grimmeiss, Appl. Phys. Lett.53, 2507 (1988).

    Article  CAS  Google Scholar 

  31. A. L. Thilderkvist, G. Grossmann, M. Kleverman and H. G. Grimmeiss, Mat. Res. Soc. Symp. Proc., Boston, 1989 (in print).

  32. G. W. Ludwig and H. H. Woodbury, Solid State Phys.13, 223 (1962).

    CAS  Google Scholar 

  33. L. C. Kimmerling, J. L. Benton and J. J. Rubin, Defect and Radiation Effects in Semiconductors 1980, Inst. of Physics Conf. Ser. 59, 217 (1981).

  34. R. Czaputa, H. Feichtinger and J. Oswald, Solid State Com- mun.47, 4, 223 (1983).

    Google Scholar 

  35. J. Wagner and R. Sauer, Phys. Rev.,B26, 6, 3502.

  36. J. Olajos, M. Kleverman, B. Bech Nielsen and H. G. Grim- meiss, Inst. Phys. Conf. Ser. No 95, p. 101 (1989).

  37. M. Kleverman, J. Olajos and H. G. Grimmeiss, Phys. Rev.B37, 2613 (1988) and references therein.

    Google Scholar 

  38. J. Olajos, M. Kleverman and H. G. Grimmeiss, Phys. Rev.B40, 6196 (1989).

    Google Scholar 

  39. M. Pugnet, J. Barbolla, J. C. Brabant, F. Saint-Yves and M. Brousseau, Phys. Status Solidi A35, 533 (1976).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Solid State Physics, University of Lund, P.O. Box 118, S-221 00 Lund, Sweden

    H. G. Grimmeiss, M. Kleverman, J. Olajos & P. Omling

Authors
  1. H. G. Grimmeiss
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Kleverman
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Olajos
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. Omling
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Grimmeiss, H.G., Kleverman, M., Olajos, J. et al. Electronic defect characterization in silicon. J. Electron. Mater. 19, 837–849 (1990). https://doi.org/10.1007/BF02651394

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02651394

Keywords

Search

Navigation