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Surface wave excitation auger electron spectroscopy of lnGaAs/GaAs(001) grown by alternate molecular-beam epitaxy

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Abstract

An angle-resolved electron-beam-excitation Auger-electron-spectroscopy, called as “surface wave excitation Auger electron spectroscopy (SWEAES),” was developed to characterize the semiconductor surface on an atomic scale. SWEAES enables us to get information about (1) surface valence electron states, (2) surface inner potentials concerned with high energy electron diffraction at the surface wave resonance (SWR) condition, (3) surface composition of ultra-thin heterostructures, and (4) confinement effects of diffracted surface electron waves at the SWR condition. These effects were demonstrated for In1-x Ga x As/GaAs(001)-c(8 × 2)-In/Ga and (GaAs)2/(InAs)1/GaAs(001) strained single quantum well surfaces.

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Authors and Affiliations

  1. Dept. Mats. Sci. and Eng., Faculty of Engineering, Osaka University, Osaka 565, Suita, JAPAN

    Hiroshi Nakayama, Tuyoshi Takenaka, Hidefumi Maeda & Hiroshi Fujita

  2. Dept. Appl. Phys., Faculty of Engineering, Osaka University, Osaka 565, Suita, JAPAN

    Kazuyuki Ueda

Authors
  1. Hiroshi Nakayama
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  2. Tuyoshi Takenaka
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  3. Hidefumi Maeda
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  4. Hiroshi Fujita
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  5. Kazuyuki Ueda
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The current address: Dept. Elect. Eng., Faculty of Engineering, Kobe University, 1-1 Rokkodai-cho, Nada-Ku, Kobe, 657, JAPAN

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Nakayama, H., Takenaka, T., Maeda, H. et al. Surface wave excitation auger electron spectroscopy of lnGaAs/GaAs(001) grown by alternate molecular-beam epitaxy. J. Electron. Mater. 19, 801–808 (1990). https://doi.org/10.1007/BF02651388

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  • DOI: https://doi.org/10.1007/BF02651388

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