Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures N. S. VolkovaA. P. GorshkovD. O. Filatov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 139 - 142
Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well P. S. VergelesE. B. Yakimov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 143 - 148
Nucleation and growth of ordered groups of SiGe quantum dots V. A. ZinovyevA. V. DvurechenskiiA. V. Mudryi XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 149 - 153
Study of the crystal structure of silicon nanoislands on sapphire N. O. KrivulinA. V. PirogovA. I. Bobrov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 154 - 156
Molecular beam epitaxy of III-P x As1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element E. A. EmelyanovM. A. PutyatoV. V. Preobrazhensky XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 157 - 165
Transverse plasmon mode in a screened two-dimensional electron system D. V. FateevV. S. MelnikovaV. V. Popov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 166 - 169
An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells V. Ya. AleshkinN. V. DikarevaS. M. Nekorkin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 170 - 173
Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling S. S. Krishtopenko XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 174 - 180
Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells Yu. G. ArapovS. V. GudinaM. V. Yakunin XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 181 - 186
Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B D. V. KozlovS. V. MorozovV. I. Gavrilenko XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 187 - 190
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures S. S. KrishtopenkoK. V. MaremyaninB. N. Zvonkov XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014 05 February 2015 Pages: 191 - 198
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts V. A. KulbachinskiiL. N. OveshnikovP. P. Maltsev Electronic Properties of Semiconductors 05 February 2015 Pages: 199 - 208
The effect of an excess of components on the electrical properties of indium-antimonide films A. M. GulyaevA. S. Shnitnikov Surfaces, Interfaces, and Thin Films 05 February 2015 Pages: 209 - 213
Antireflective nanostructured zinc oxide arrays produced by pulsed electrodeposition N. P. KlochkoK. S. KlepikovaA. V. Kopach Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2015 Pages: 214 - 223
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers D. V. GulyaevK. S. ZhuravlevA. I. Toropov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2015 Pages: 224 - 228
On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation A. I. VlasenkoA. BaidullaevaO. S. Litvin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2015 Pages: 229 - 233
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well G. B. GalievI. S. Vasil’evskiiP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2015 Pages: 234 - 241
Terahertz-emission generation caused by new effects in the 6H-SiC natural superlattice V. I. SankinA. V. AndrianovA. G. Petrov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2015 Pages: 242 - 246
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites K. G. BelyaevA. A. UsikovaP. N. Brunkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2015 Pages: 247 - 253
Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors Yi-Chen WuJung-Hui TsaiFu-Min Wang Physics of Semiconductor Devices 05 February 2015 Pages: 254 - 258
Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices M. I. VexlerYu. Yu. IllarionovT. Grasser Physics of Semiconductor Devices 05 February 2015 Pages: 259 - 263
Features of photoconversion in highly efficient silicon solar cells A. V. SachenkoA. I. ShkrebtiiI. O. Sokolovskyi Physics of Semiconductor Devices 05 February 2015 Pages: 264 - 269
Dominant factors of the laser gettering of silicon wafers Yu. I. BokhanV. S. KamenkovN. K. Tolochko Fabrication, Treatment, and Testing of Materials and Structures 05 February 2015 Pages: 270 - 273
Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates A. M. MizerovP. N. KladkoA. Yu. Egorov Fabrication, Treatment, and Testing of Materials and Structures 05 February 2015 Pages: 274 - 277
