Abstract
The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown.
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Original Russian Text © A.M. Mizerov, P.N. Kladko, E.V. Nikitina, A.Yu. Egorov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 283–286.
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Mizerov, A.M., Kladko, P.N., Nikitina, E.V. et al. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates. Semiconductors 49, 274–277 (2015). https://doi.org/10.1134/S1063782615020177
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DOI: https://doi.org/10.1134/S1063782615020177