Abstract
The causes of anomalous behavior of the Hall mobility of charge carriers as a result of a decrease in the measurement temperature from 300 K in indium-antimonide films obtained by the method of three temperatures are studied. It is shown experimentally that there exist drops in the “admissible” temperatures of evaporators of components and the substrate within which continuous conducting films are obtained. The optimal conditions for sample preparation for which the values of the mobility remain practically constant in the temperature range of 150–350 K are determined. On the basis of the comparison with optical-transmission spectra, it is concluded that there is a high concentration of defects in the films; these defects are related to deviation of the composition from stoichiometry and act as donor and acceptor centers. The presence of such defects makes it possible to explain the decrease in mobility in the films as the temperature is lowered.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. A. Goryunova, The Chemistry of Diamond-Like Semiconductors (Leningr. Univ., Leningrad, 1963; Chapman and Hall, London, 1965).
Yu. V. Gulyaev, A. A. Veselov, A. G. Veselov, et al., Tech. Phys. 49, 1068 (2004).
K. V. Shalimova, A. M. Gulyaev, V. L. Tarasov, and A. S. Shnitnikov, Elektron. Tekh., Poluprovodn. Mater. 14(2), 77 (1969).
A. A. Nesmeyanov, Vapor Pressure of the Chemical Elements (Akad. Nauk SSSR, Moscow, 1961; Elsevier, Amsterdam, 1963).
W. Hanlein and K. G. Gunther, in Proceedings of the 1st International Congress on Vacuumtechnik (1956).
B. F. Ormont, N. A. Goryunova, I. N. Ageeva, and N. N. Fedorova, Izv. Akad. Nauk SSSR, Ser. Fiz. 21, 133 (1957).
V. T. Bublik, B. N. Kevarkov, and B. Bosvenskii, Izv. Akad. Nauk SSSR, Neorg. Mater. 20, 364 (1984).
F. A. Zaitov, A. Ya. Polyakov, and O. V. Gorshkova, Izv. Akad. Nauk SSSR, Neorg. Mater. 17, 778 (1981).
V. D. Verner and D. K. Pichugovskii, Sov. Phys. Semicond. 7, 692 (1973).
T. V. Abaeva, V. T. Bublik, and A. N. Morozov, Izv. Akad. Nauk SSSR, Neorg. Mater. 24, 15 (1988).
M. Oswfldovski, Thin Solid Films 56, 331 (1970).
K. G. Gunter, Naturwissenshaften 45, 415 (1958).
J. Y. Tsao, J. Cryst. Growth 110, 595 (1991).
E. V. Zagoryanskaya and P. S. Kireev, Izv. Vyssh. Uchebn. Zaved., Fiz. 4, 124 (1961).
E. M. Voronkova, B. N. Grechushnikov, G. I. Distler, and I. P. Petrov, Optical Materials for Infrared Engineering, The Handbook (Nauka, 1965), p. 255 [in Russian].
Ida Sh, J. Appl. Phys. 65, 636 (1989).
S. V. Varganov and A. M. Gulyaev, Elektron. Tekh., Mater., No. 5, 4 (1979).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.M. Gulyaev, A.S. Shnitnikov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 214–218.
Rights and permissions
About this article
Cite this article
Gulyaev, A.M., Shnitnikov, A.S. The effect of an excess of components on the electrical properties of indium-antimonide films. Semiconductors 49, 209–213 (2015). https://doi.org/10.1134/S1063782615020098
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615020098