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Study of the crystal structure of silicon nanoislands on sapphire

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
  • Published:
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Abstract

The results of studies of the crystal structure of silicon nanoislands on sapphire are reported. It is shown that the principal defects in silicon nanoislands on sapphire are twinning defects. As a result of the formation of such defects, different crystallographic orientations are formed in silicon nanoislands on sapphire. In the initial stages of the molecular-beam epitaxy of silicon on sapphire, there are two basic orientations: the (001) orientation parallel to the surface and the (001) orientation at an angle of 70° to the surface.

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References

  1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

    Article  ADS  Google Scholar 

  2. D. A. Pavlov, E. V. Korotkov, P. A. Shilyaev, and N. O. Krivulin, Tech. Phys. Lett. 36, 548 (2010).

    Article  ADS  Google Scholar 

  3. N. O. Krivulin, D. A. Pavlov, and P. A. Shilyaev, Semiconductors 47, 1595 (2013).

    Article  ADS  Google Scholar 

  4. A. Portavoce, K. Hoummada, I. Berbezier, A. Ronda, and D. Mangelinck, Appl. Phys. Lett. 100, 164105 (2012).

    Article  ADS  Google Scholar 

  5. A. I. Nikiforov, V. A. Timofeev, S. A. Teys, A. K. Gutakovsky, and O. P. Pchelyakov, Thin Solid Films 520, 3319 (2012).

    Article  ADS  Google Scholar 

  6. D. A. Pavlov, P. A. Shilyaev, N. O. Krivulin, et al., Vestn. Nizhegor. Univ., Fiz. Tverd. Tela 4(1), 38 (2013).

    Google Scholar 

  7. P. D. Braun, Yu. Yu. Loginov, W. M. Stobbs, and C. J. Humphreys, Phys. Solid State 38, 160 (1996).

    ADS  Google Scholar 

  8. M. S. Abrahams, V. L. Hutchison, and G. R. Booker, Phys. Status Solidi A 63, K3 (1981).

    Article  ADS  Google Scholar 

  9. M. E. Twig, E. D. Richmond, and J. G. Pellegrino, Appl. Phys. Lett. 54, 1766 (1989).

    Article  ADS  Google Scholar 

  10. S. A. Denisov, S. P. Svetlov, V. Yu. Chalkov, et al., Vestn. Nizhegor. Univ., Fiz. Tverd. Tela 1(9), 185 (2006).

    Google Scholar 

  11. M. J. Hytch, E. Snoeck, and R. Kitaas, Ultramicroscopy 74, 131 (1998).

    Article  Google Scholar 

  12. M. Takeda and J. Suzuki, J. Opt. Soc. Am. A 13, 1495 (1996).

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, Nizhni Novgorod, 603950, Russia

    N. O. Krivulin, A. V. Pirogov, D. A. Pavlov & A. I. Bobrov

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  1. N. O. Krivulin
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  2. A. V. Pirogov
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  3. D. A. Pavlov
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  4. A. I. Bobrov
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Correspondence to N. O. Krivulin.

Additional information

Original Russian Text © N.O. Krivulin, A.V. Pirogov, D.A. Pavlov, A.I. Bobrov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 160–162.

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Krivulin, N.O., Pirogov, A.V., Pavlov, D.A. et al. Study of the crystal structure of silicon nanoislands on sapphire. Semiconductors 49, 154–156 (2015). https://doi.org/10.1134/S1063782615020153

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  • DOI: https://doi.org/10.1134/S1063782615020153

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