Abstract
A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si3N4 over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si3N4.
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Original Russian Text © K.G. Belyaev, A.A. Usikova, V.N. Jmerik, P.S. Kop’ev, S.V. Ivanov, A.A. Toropov, P.N. Brunkov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 254–260.
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Belyaev, K.G., Usikova, A.A., Jmerik, V.N. et al. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites. Semiconductors 49, 247–253 (2015). https://doi.org/10.1134/S1063782615020049
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DOI: https://doi.org/10.1134/S1063782615020049