Abstract
The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.
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Original Russian Text © Yu.G. Arapov, S.V. Gudina, A.S. Klepikova, V.N. Neverov, N.G. Shelushinina, M.V. Yakunin, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 186–191.
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Arapov, Y.G., Gudina, S.V., Klepikova, A.S. et al. Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. Semiconductors 49, 181–186 (2015). https://doi.org/10.1134/S1063782615020037
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DOI: https://doi.org/10.1134/S1063782615020037