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Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts

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Abstract

HEMT structures with In0.53Ga0.47As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ q and transport μ t mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ q and μ t in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In0.53Ga0.47As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119991, Russia

    V. A. Kulbachinskii, L. N. Oveshnikov & R. A. Lunin

  2. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Nagornyi pr. 7, str.5, Moscow, 117105, Russia

    N. A. Yuzeeva, G. B. Galiev, E. A. Klimov & P. P. Maltsev

  3. National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, Moscow, 115409, Russia

    V. A. Kulbachinskii

Authors
  1. V. A. Kulbachinskii
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  2. L. N. Oveshnikov
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  3. R. A. Lunin
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  4. N. A. Yuzeeva
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  5. G. B. Galiev
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  6. E. A. Klimov
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  7. P. P. Maltsev
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Correspondence to V. A. Kulbachinskii.

Additional information

Original Russian Text © V.A. Kulbachinskii, L.N. Oveshnikov, R.A. Lunin, N.A. Yuzeeva, G.B. Galiev, E.A. Klimov, P.P. Maltsev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 204–213.

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Kulbachinskii, V.A., Oveshnikov, L.N., Lunin, R.A. et al. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts. Semiconductors 49, 199–208 (2015). https://doi.org/10.1134/S1063782615020165

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  • DOI: https://doi.org/10.1134/S1063782615020165

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