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Dominant factors of the laser gettering of silicon wafers

  • Fabrication, Treatment, and Testing of Materials and Structures
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Abstract

The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.

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Authors and Affiliations

  1. Vitebsk State University, Vitebsk, 210038, Belarus

    Yu. I. Bokhan

  2. SPDNPUP Spektrkompleks, Vitebsk, 210038, Belarus

    V. S. Kamenkov

  3. Belarus State Agrarian Technical University, Minsk, 220056, Belarus

    N. K. Tolochko

Authors
  1. Yu. I. Bokhan
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  2. V. S. Kamenkov
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  3. N. K. Tolochko
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Corresponding author

Correspondence to Yu. I. Bokhan.

Additional information

Original Russian Text © Yu.I. Bokhan, V.S. Kamenkov, N.K. Tolochko, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 278–282.

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Bokhan, Y.I., Kamenkov, V.S. & Tolochko, N.K. Dominant factors of the laser gettering of silicon wafers. Semiconductors 49, 270–273 (2015). https://doi.org/10.1134/S1063782615020050

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  • DOI: https://doi.org/10.1134/S1063782615020050

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