1. Recombination and trapping centers in pure and doped TlBr crystals

   • I. M. Gazizov
   • V. M. Zaletin
   • N. B. Smirnov

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1123 - 1133

2. Decrease in the binding energy of donors in heavily doped GaN:Si layers

   • I. V. Osinnykh
   • K. S. Zhuravlev
   • D. Yu. Kazantsev

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1134 - 1138

3. Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide

   • M. M. Gadjialiev
   • Z. Sh. Pirmagomedov
   • T. N. Efendieva

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1139 - 1140

4. On the kinetics of electron processes in ⁶⁰Co γ-irradiated n-Ge single crystals

   • G. P. Gaidar

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1141 - 1144

5. Structural and optical properties of ZnO films produced by a nonvacuum chemical technique

   • V. V. Strelchuk
   • K. A. Avramenko
   • V. M. Tkach

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1145 - 1150

6. Features of the local structure of the Se₉₅Te₅ chalcogenide vitreous semiconductor doped with samarium

   • S. I. Mekhtiyeva
   • A. I. Isayev
   • V. Z. Zeynalov

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1151 - 1154

7. Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix

   • A. V. Baklanov
   • A. A. Gutkin
   • S. G. Konnikov

   Electronic Properties of Semiconductors 31 August 2014 Pages: 1155 - 1160

8. Nature of the blue emission band in zinc selenide containing sulfur isovalent impurity

   • V. P. Makhniy
   • A. M. Slyotov
   • E. V. Stez

   Spectroscopy, Interaction with Radiation 31 August 2014 Pages: 1161 - 1162

9. On the band-gap width of (FeIn₂S₄)_{1 − x} (In₂S₃) _x alloys

   • I. V. Bodnar

   Surfaces, Interfaces, and Thin Films 31 August 2014 Pages: 1163 - 1166

10. On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures

    • I. M. Kotina
    • A. M. Danishevskii
    • L. M. Tuhkonen

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1167 - 1173

11. Charge-transport mechanisms in heterostructures based on TiO₂:Cr₂O₃ thin films

    • A. I. Mostovoi
    • V. V. Brus
    • P. D. Maryanchuk

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1174 - 1177

12. Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair

    • V. G. Talalaev
    • G. E. Cirlin
    • P. N. Racec

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1178 - 1184

13. Optical properties of heterostructures with deep AlSb/InAs_0.84Sb_0.16/AlSb quantum wells

    • N. V. Pavlov
    • G. G. Zegrya

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1185 - 1195

14. Ion-beam synthesis of InSb nanocrystals in the buried SiO₂ layer of a silicon-on-insulator structure

    • I. E. Tyschenko
    • M. Voelskow
    • V. P. Popov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1196 - 1201

15. Effect of the duration of electrochemical anodization on the microhardness of macroporous silicon

    • A. A. Dmitrievskiy
    • N. Yu. Efremova
    • D. G. Guseva

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 August 2014 Pages: 1202 - 1204

16. Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method

    • K. A. Svit
    • D. Yu. Protasov
    • K. S. Zhuravlev

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 August 2014 Pages: 1205 - 1210

17. Surface of porous silicon under hydrophilization and hydrolytic degradation

    • V. P. Ulin
    • N. V. Ulin
    • A. V. Bobyl

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 August 2014 Pages: 1211 - 1216

18. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells

    • V. M. Andreev
    • E. A. Grebenshchikova
    • A. A. Usikova

    Physics of Semiconductor Devices 31 August 2014 Pages: 1217 - 1221

19. Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors

    • Jung-Hui Tsai
    • You-Ren Wu
    • Wen-Chau Liu

    Physics of Semiconductor Devices 31 August 2014 Pages: 1222 - 1225

20. Technology and electronic properties of PHEMT AlGaAs/In _y(z)Ga_{1 − y(z)}As/GaAs compositionally graded quantum wells

    • I. S. Vasil’evskii
    • A. N. Vinichenko
    • M. N. Strikhanov

    Physics of Semiconductor Devices 31 August 2014 Pages: 1226 - 1232

21. Interaction of heterogeneous thin films and phase formation in the Tl-Fe-S system

    • E. B. Asgerov
    • A. I. Madadzada
    • R. N. Mehdiyeva

    Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1233 - 1236

22. Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films

    • P. N. Krylov
    • R. M. Zakirova
    • I. V. Fedotova

    Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1237 - 1241

23. Electrical and optical properties of zinc-oxide films deposited by the ion-beam sputtering of an oxide target

    • A. P. Dostanko
    • O. A. Ageev
    • Z. E. Vakulov

    Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1242 - 1247

24. Temperature stability of contact systems for GaSb-based photovoltaic converters

    • V. P. Khvostikov
    • S. V. Sorokina
    • N. Kh. Timoshina

    Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1248 - 1253

25. High-power AlGaInN LED chips with two-level metallization

    • D. A. Zakheim
    • G. V. Itkinson
    • D. A. Bauman

    Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1254 - 1259