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Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide

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Abstract

The thermoelectric power of electronic indium antimonide with n = 2 × 1014 cm−3 in a transverse magnetic field as high as 7 kOe is studied in the temperature range from 4.8 to 120 K. The thermoelectric power is found to be independent of field at a temperature close to 56 K.

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Authors and Affiliations

  1. Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, 367002, Russia

    M. M. Gadjialiev, Z. Sh. Pirmagomedov & T. N. Efendieva

Authors
  1. M. M. Gadjialiev
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  2. Z. Sh. Pirmagomedov
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  3. T. N. Efendieva
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Corresponding author

Correspondence to M. M. Gadjialiev.

Additional information

Original Russian Text © M.M. Gadjialiev, Z.Sh. Pirmagomedov, T.N. Efendieva, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1169–1170.

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Gadjialiev, M.M., Pirmagomedov, Z.S. & Efendieva, T.N. Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide. Semiconductors 48, 1139–1140 (2014). https://doi.org/10.1134/S1063782614090085

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  • DOI: https://doi.org/10.1134/S1063782614090085

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