Abstract
A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the active-to-total area ratio of the heterostructure (to 78%). Numerical simulation of the current spread, employed when developing the chip topology, makes it possible to achieve high uniformity of the current distribution over the active-region area and to obtain small values of the differential resistance of the chip (0.3 Ω). Light-emitting diodes with the maximum external quantum efficiency (60%) and output optical power (542 mW) at a working pump current of 350 mA are fabricated on the basis of crystals developed in the study.
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Original Russian Text © D.A. Zakheim, G.V. Itkinson, M.V. Kukushkin, L.K. Markov, O.V. Osipov, A.S. Pavlyuchenko, I.P. Smirnova, A.E. Chernyakov, D.A. Bauman, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1287–1293.
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Zakheim, D.A., Itkinson, G.V., Kukushkin, M.V. et al. High-power AlGaInN LED chips with two-level metallization. Semiconductors 48, 1254–1259 (2014). https://doi.org/10.1134/S1063782614090267
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DOI: https://doi.org/10.1134/S1063782614090267