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Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells

  • Physics of Semiconductor Devices
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Abstract

The photoelectric characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells are studied in relation to the method used to form the photocell chip. It is shown that the application of a postgrowth technique developed in the study for separating a nanoheterostructure into chips in a single process makes it possible to improve the quality of passivation of the chip edges, which diminishes the surface leakage currents and makes larger the yield of devices with improved characteristics.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. M. Andreev, E. A. Grebenshchikova, P. A. Dmitriev, N. D. Ilinskaya, V. S. Kalinovsky, E. V. Kontrosh, A. V. Malevskaya & A. A. Usikova

Authors
  1. V. M. Andreev
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  2. E. A. Grebenshchikova
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  3. P. A. Dmitriev
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  4. N. D. Ilinskaya
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  5. V. S. Kalinovsky
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  6. E. V. Kontrosh
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  7. A. V. Malevskaya
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  8. A. A. Usikova
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Corresponding author

Correspondence to V. S. Kalinovsky.

Additional information

Original Russian Text © V.M. Andreev, E.A. Grebenshchikova, P.A. Dmitriev, N.D. Ilinskaya, V.S. Kalinovsky, E.V. Kontrosh, A.V. Malevskaya, A.A. Usikova, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1249–1253.

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Andreev, V.M., Grebenshchikova, E.A., Dmitriev, P.A. et al. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells. Semiconductors 48, 1217–1221 (2014). https://doi.org/10.1134/S1063782614090024

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  • DOI: https://doi.org/10.1134/S1063782614090024

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