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Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells

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Abstract

Graded In y Ga1 − y As quantum well epitaxial technology is developed for engineering the band potential profile. The crystal structure of the samples is clarified by high-resolution X-ray diffraction. The influence of quantum-well bending on the crystal and electron transport properties is studied on one- and two-side δ-doped Al0.23Ga0.77As/In y Ga1 − y As/Al0.23Ga0.77As PHEMT heterostructures. The highest InAs content gradient reached is 1.2%/nm for the mean InAs content y = 0. 2. Optimization of the InAs content grading leads to an increase in the electron mobility and concentration. This effect is related to the straightening and deepening of the quantum-well potential profile. In addition, the electron wavefunction shifts toward the quantum-well center, thus reducing electron scattering.

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Authors and Affiliations

  1. National Research Nuclear University MEPhI, Moscow, 115409, Russia

    I. S. Vasil’evskii, A. N. Vinichenko, M. M. Grekhov, V. P. Gladkov, N. I. Kargin & M. N. Strikhanov

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  1. I. S. Vasil’evskii
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  2. A. N. Vinichenko
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  3. M. M. Grekhov
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  4. V. P. Gladkov
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  5. N. I. Kargin
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  6. M. N. Strikhanov
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Corresponding author

Correspondence to A. N. Vinichenko.

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Original Russian Text © I.S. Vasil’evskii, A.N. Vinichenko, M.M. Grekhov, V.P. Gladkov, N.I. Kargin, M.N. Strikhanov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1258–1264.

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Vasil’evskii, I.S., Vinichenko, A.N., Grekhov, M.M. et al. Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells. Semiconductors 48, 1226–1232 (2014). https://doi.org/10.1134/S1063782614090255

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  • DOI: https://doi.org/10.1134/S1063782614090255

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