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Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films

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Abstract

It is shown that ion-beam treatment during the deposition of ITO films by reactive radio-frequency magnetron sputtering induces a decrease in the resistivity of the films even at room temperature. Variations in the Hall mobility and concentration of charge carriers are studied in relation to the condensation temperature and ion-beam treatment current. The resistivity decreases mainly because of an increase in the concentration of majority charge carriers. It is inferred that the change in the concentration of charge carriers is associated with {ie1237-1} defects.

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Authors and Affiliations

  1. Udmurt State University, Izhevsk, 426034, Russia

    P. N. Krylov, R. M. Zakirova & I. V. Fedotova

Authors
  1. P. N. Krylov
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  2. R. M. Zakirova
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  3. I. V. Fedotova
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Correspondence to P. N. Krylov.

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Original Russian Text © P.N. Krylov, R.M. Zakirova, I.V. Fedotova, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1269–1273.

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Krylov, P.N., Zakirova, R.M. & Fedotova, I.V. Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films. Semiconductors 48, 1237–1241 (2014). https://doi.org/10.1134/S1063782614090139

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  • DOI: https://doi.org/10.1134/S1063782614090139

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