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On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals

  • Electronic Properties of Semiconductors
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Abstract

Variations in the main electrical parameters of n-Ge single crystals with different doping levels under the effect of 60Co γ-irradiation are investigated. A noticeable increase in the carrier mobility in the irradiated samples is observed in some dopant concentration range and the nature of this effect is explained. It is demonstrated that the electron-mobility variation under the action of γ-irradiation in the initial n-Ge crystals with an oxygen impurity and in the annealed crystals have opposite signs. It is established that the oxygen complexes formed in the samples during annealing and the local lattice stresses near these complexes play a key role in the radiation-induced mobility increase. It is clarified that the radiation resistance of the electron mobility significantly depends on the crystallographic orientation of the investigated samples.

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References

  1. A. C. Beer, Galvanomagnetic Effects in Semiconductors (Academic Press, New York, London, 1963).

    MATH  Google Scholar 

  2. C. S. Fuller, W. Kaiser, and C. D. Thurmond, J. Phys. Chem. Sol. 17, 301 (1961).

    Article  ADS  Google Scholar 

  3. P. I. Baranskii, V. V. Gaiduchenko, and V. O. Shershel, Ukr. Fiz. Zh. 15, 1192 (1970).

    Google Scholar 

  4. V. M. Babich, P. I. Baranskii, and V. A. Shershel, Phys. Status Solidi 42, K23 (1970).

    Article  ADS  Google Scholar 

  5. E. N. Vidalko, G. P. Gaidar, and V. A. Girii, Izv. Akad. Nauk SSSR, Neorg. Mater. 22, 533 (1986).

    Google Scholar 

  6. V. V. Emtsev, M. I. Klinger, and T. V. Mashovets, JETP Lett. 19, 301 (1974).

    ADS  Google Scholar 

  7. V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev, Defects in the Bulk and at the Surface of Silicon (Nauka, Moscow, 1990) [in Russian].

    Google Scholar 

  8. A. A. Groza, P. G. Litovchenko, and M. I. Starchik, Radiation Effects in the Infrared Absorption and the Silicon Structure (Nauk. Dumka, Kiev, 2006) [in Ukrainian).

    Google Scholar 

  9. V. S. Vavilov, N. P. Kekelidze, and L. S. Smirnov, Radiation Effects in Semiconductors (Nauka, Moscow, 1988) [in Russian].

    Google Scholar 

  10. P. I. Baranskii, I. S. Buda, I. V. Dakhovskii, and V. V. Kolomoets, Electrical and Galvanomagnetic Phenomena in Anisotropic Semiconductors (Nauk. Dumka, Kiev, 1977) [in Russian].

    Google Scholar 

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Authors and Affiliations

  1. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, 03680, Ukraine

    G. P. Gaidar

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  1. G. P. Gaidar
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Correspondence to G. P. Gaidar.

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Original Russian Text © G.P. Gaidar, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1171–1175.

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Gaidar, G.P. On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals. Semiconductors 48, 1141–1144 (2014). https://doi.org/10.1134/S1063782614090097

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  • DOI: https://doi.org/10.1134/S1063782614090097

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