1. Influence of pyrolysis conditions of aqueous solution aerosol of thiocarbamide complexes on the microwave photoconductivity of cadmium sulfide films

   • N. L. Sermakasheva
   • Yu. M. Shul’ga
   • G. F. Novikov

   Electronic and Optical Properties of Semiconductors Pages: 497 - 502

2. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

   • T. I. Voronina
   • T. S. Lagunova
   • Yu. P. Yakovlev

   Electronic and Optical Properties of Semiconductors Pages: 503 - 520

3. On metal-insulator electronic phase transitions in semiconductors

   • M. I. Daunov
   • I. K. Kamilov
   • S. F. Gabibov

   Electronic and Optical Properties of Semiconductors Pages: 521 - 526

4. Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys

   • T. S. Shamirzaev
   • A. I. Toropov
   • D. R. T. Zahn

   Electronic and Optical Properties of Semiconductors Pages: 527 - 533

5. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

   • G. F. Karavaev
   • V. N. Chernyshov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 534 - 542

6. Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

   • I. V. Antonova
   • S. S. Shaĭmeev
   • S. A. Smagulova

   Semiconductor Structures, Interfaces, and Surfaces Pages: 543 - 548

7. Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes

   • S. Yu. Davydov
   • A. A. Lebedev
   • O. V. Posrednik

   Semiconductor Structures, Interfaces, and Surfaces Pages: 549 - 553

8. Electrical characteristics of the ITO/HgInTe photodiodes

   • L. A. Kosyachenko
   • I. M. Rarenko
   • Sun Weiguo

   Semiconductor Structures, Interfaces, and Surfaces Pages: 554 - 557

9. Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers

   • Yu. V. Khabarov
   • V. V. Kapaev
   • G. B. Galiev

   Low-Dimensional Systems Pages: 558 - 569

10. Tunneling recombination in spatially inhomogeneous structures

    • N. S. Grushko
    • E. A. Loginova
    • L. N. Potanakhina

    Low-Dimensional Systems Pages: 570 - 573

11. The study of lateral carrier transport in structures with InGaN quantum dots in the active region

    • V. S. Sizov
    • D. S. Sizov
    • N. N. Ledentsov

    Low-Dimensional Systems Pages: 574 - 580

12. Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field

    • M. P. Telenkov
    • Yu. A. Mityagin

    Low-Dimensional Systems Pages: 581 - 586

13. The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

    • A. A. Tonkikh
    • G. E. Cirlin
    • B. V. Novikov

    Low-Dimensional Systems Pages: 587 - 591

14. Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells

    • A. N. Pikhtin
    • O. S. Komkov
    • K. V. Bazarov

    Low-Dimensional Systems Pages: 592 - 597

15. The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon

    • B. M. Bulakh
    • N. E. Korsunska
    • M. K. Sheĭnkman

    Amorphous, Vitreous, and Porous Semiconductors Pages: 598 - 604

16. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

    • A. A. Efremov
    • N. I. Bochkareva
    • Yu. G. Shreter

    Physics of Semiconductor Devices Pages: 605 - 610

17. High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

    • A. Yu. Andreev
    • A. Yu. Leshko
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 611 - 614

18. VCSELs based on arrays of sub-monolayer InGaAs quantum dots

    • S. A. Blokhin
    • N. A. Maleev
    • N. N. Ledentsov

    Physics of Semiconductor Devices Pages: 615 - 619