Abstract
Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 µm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10–12)-µm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Vertical-Cavity Surface-Emitting Lasers, Ed. by C. W. Wilmsen, H. Temkin, and L. A. Coldren (Cambridge Univ. Press, Cambridge, 1999).
V. M. Ustinov, A. E. Zhukov, A. Y. Egorov, and N. A. Maleev, Quantum Dot Lasers (Oxford Univ. Press, Oxford, 2003).
V. M. Ustinov, N. A. Maleev, A. R. Kovsh, and A. E. Zhukov, Phys. Status Solidi A 202, 396 (2005).
J. A. Lott, N. N. Ledentsov, V. M. Ustinov, et al., Electron. Lett. 36, 1384 (2000).
J. K. Kim, R. L. Naone, and L. A. Coldren, IEEE J. Sel. Top. Quantum Electron. 6, 504 (2000).
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, et al., Electron. Lett. 35, 1845 (1999).
S. S. Mikhrin, A. R. Kovsh, A. E. Zhukov, et al., in Proceedings of 26th International Conference on the Physics of Semiconductors (Edinburgh, UK, 2002), Paper L2.3.
A. Bond, P. D. Dapkus, and J. D. O’Brien, IEEE Photonics Technol. Lett. 10, 13 627 (1998).
N. A. Maleev, A. R. Kovsh, A. E. Zhukov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1265 (2003) [Semiconductors 37, 1234 (2003)].
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 782 (2005) [Semiconductors 39, 748 (2005)].
P. D. Floyd, B. J. Thibeault, E. R. Hegblom, et al., IEEE Photonics Technol. Lett. 5, 590 (1996).
E. R. Hegblom, D. I. Babic, B. J. Thibeault, and L. A. Coldren, Appl. Phys. Lett. 68, 1757 (1996).
H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978; Mir, Moscow, 1981).
T. Makino, J. D. Evans, and G. Mak, Appl. Phys. Lett. 71, 2871 (1997).
M. Born and E. Wolf, Principles of Optics, 3rd ed. (Pergamon, Oxford, 1966; Nauka, Moscow, 1970).
M. Jungo, F. M. di Sopra, D. Erni, and W. Baechtold, J. Appl. Phys. 91, 5550 (2002).
G. M. Yang, M. H. MacDugal, V. Pudikov, and P. D. Dapkus, IEEE Photonics Technol. Lett. 7, 1228 (1995).
Author information
Authors and Affiliations
Additional information
Original Russian Text © S.A. Blokhin, N.A. Maleev, A.G. Kuz’menkov, Yu. M. Shernyakov, I.I. Novikov, N.Yu. Gordeev, V.V. Dyudelev, G.S. Sokolovskiĭ, V.I. Kuchinskiĭi, M.M. Kulagina, M.V. Maximov, V.M. Ustinov, A.R. Kovsh, S.S. Mikhrin, N.N. Ledentsov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 633–638.
Rights and permissions
About this article
Cite this article
Blokhin, S.A., Maleev, N.A., Kuz’menkov, A.G. et al. VCSELs based on arrays of sub-monolayer InGaAs quantum dots. Semiconductors 40, 615–619 (2006). https://doi.org/10.1134/S1063782606050186
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/S1063782606050186