Abstract
Symmetric and asymmetric separate-confinement AlGaAs/GaAs heterostructures have been grown by MOCVD in accordance with the concept of design of high-power semiconductor lasers. High-power laser diodes with a 100-µm aperture, emitting in the 808–850-nm range, were fabricated from these structures. The internal optical loss in asymmetric separate-confinement heterostructures with broadened waveguide is reduced to 0.5 cm−1. In the lasers with 1.7-µm-thick waveguide, the output optical power of 7.5 W in CW mode was achieved owing to reduction of the optical emission density at the cavity mirror to 4 mW/cm2.
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References
K. Shighara, Y. Nagai, S. Karadida, et al., IEEE J. Quantum Electron. 27, 1537 (1991).
D. A. Livshits, I. V. Kochnev, V. M. Lantratov, et al., Electron. Lett. 36, 1848 (2000).
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 374 (2004) [Semiconductors 38, 360 (2004)].
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1477 (2004) [Semiconductors 38, 1430 (2004)].
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, et al., Electron. Lett. 40, 1413 (2004).
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 388 (2005) [Semiconductors 39, 370 (2005)].
Zh. I. Alferov, N. I. Katsavets, V. D. Petrikov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 474 (1996) [Semiconductors 30, 262 (1996)].
J. K. Wade, L. J. Mawst, D. Botez, and J. A. Morris, Electron. Lett. 34, 1100 (1998).
D. Z. Garbuzov, J. H. Abeles, N. A. Morris, et al., Proc. SPIE 2682, 20 (1996).
E. G. Golikova, V. A. Gorbylev, Yu. V. Il’in, et al., Pis’ma Zh. Tekh. Fiz. 26(7), 57 (2000) [Tech. Phys. Lett. 26, 295 (2000)].
A. Yu. Leshko, A. V. Lyutetskiĭ, N. A. Pikhtin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1393 (2002) [Semiconductors 36, 1308 (2002)].
F. Bugge, G. Erbert, J. Fricke, et al., Appl. Phys. Lett. 79, 1965 (1998).
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Original Russian Text © A.Yu. Andreev, A.Yu. Leshko, A.V. Lyutetskiĭ, A.A. Marmalyuk, T.A. Nalyot, A.A. Padalitsa, N.A. Ptkhtin, D.R. Sabitov, V.A. Simakov, S.O. Slipchenko, M.A. Khomylev, I.S. Tarasov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 628–632.
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Andreev, A.Y., Leshko, A.Y., Lyutetskiĭ, A.V. et al. High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures. Semiconductors 40, 611–614 (2006). https://doi.org/10.1134/S1063782606050174
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DOI: https://doi.org/10.1134/S1063782606050174